| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 3 |
103-1 |
Application Note - Flash Analog to Digital Converters Optimizing Performance |
Comlinear Corporation |
| 4 |
11016 |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 5 |
1318 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 6 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 7 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 8 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 9 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 10 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 11 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 12 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 13 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 14 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 15 |
1CE-402 |
Operating Considerations for RCA Solid State Devices - Application Note |
RCA Solid State |
| 16 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 17 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 18 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 19 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 20 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 21 |
1SV77 |
Application Note - Features and applications |
NEC |
| 22 |
21050 |
21050 PCI-to-PCI Bridge Hardware Implementation Application Note |
Intel |
| 23 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 24 |
22SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
| 25 |
2AC128 |
Application Note - Symmetrical transformer amplifier |
COMPELEC |
| 26 |
2AC132 |
Application Note - Symmetrical transformer amplifier |
COMPELEC |
| 27 |
2AD149 |
Application Note - Power amplifier |
COMPELEC |
| 28 |
2N1005 |
Silicon NPN Transistor |
Motorola |
| 29 |
2N1006 |
Silicon NPN Transistor |
Motorola |
| 30 |
2N1015 |
Silicon NPN Transistor |
Motorola |
| | | |
