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Datasheets found :: 2321
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No. Part Name Description Manufacturer
1 24LC22A The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o Microchip
2 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
3 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
4 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
5 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
6 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
7 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
8 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
9 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
10 2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
11 2N6533 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. General Electric Solid State
12 2N6576 15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
13 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
14 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
15 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
16 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
17 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
18 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
19 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
20 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
21 2SC2352 Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note NEC
22 2SC2353 Typical Application of 2SC2353 for UHF TV Tuner Mixer NEC
23 2SC2570A High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note NEC
24 2SC3355 Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note NEC
25 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION NEC
26 3SK74 Typical application of 3SK74 to VHF tuner RF amplifier NEC
27 3SK74 Typical Application of 3SK74 to VHF tuner mixer NEC
28 3SK87 Typical Application of 3SK87 to UHF Tuner RF Amplifier NEC
29 3SK88 Typical Application of 3SK88 to UHF tuner RF Amplifier NEC
30 80C32E Radiation Tolerant ROMless version of the 80C52 single chip 8-bit microcontroller. Atmel


Datasheets found :: 2321
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