No. |
Part Name |
Description |
Manufacturer |
1 |
0510-10 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
2 |
0510-10-2 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
3 |
108T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
4 |
109T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
5 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
6 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
7 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
8 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
9 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
10 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
11 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
12 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
13 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
14 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
15 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
16 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
17 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
18 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
19 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
20 |
1N1119 |
Silicon Power Rectifier |
Microsemi |
21 |
1N1119A |
12A silicon power rectifier, 50V |
Microsemi |
22 |
1N1119AR |
12A silicon power rectifier, 50V |
Microsemi |
23 |
1N1119B |
12A silicon power rectifier, 50V |
Microsemi |
24 |
1N1119R |
12A silicon power rectifier, 50V |
Microsemi |
25 |
1N1119RB |
12A silicon power rectifier, 50V |
Microsemi |
26 |
1N1183RBY301 |
Silicon power rectifier |
Diotec Elektronische |
27 |
1N1184RBY302 |
Silicon power rectifier |
Diotec Elektronische |
28 |
1N1186RBY303 |
Silicon power rectifier |
Diotec Elektronische |
29 |
1N1202RA |
Military Silicon Power Rectifier |
Microsemi |
30 |
1N1206RA |
Military Silicon Power Rectifier |
Microsemi |
| | | |