No. |
Part Name |
Description |
Manufacturer |
1 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
2 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
3 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
4 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
5 |
2N2857 |
NPN silicon RF small-signal transistor |
Motorola |
6 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
7 |
2N2876 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
8 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
9 |
2N3229 |
NPN RF power transistor |
RCA Solid State |
10 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
11 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
12 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
13 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
14 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
15 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
16 |
2N3663 |
NPN RF Transistor |
Fairchild Semiconductor |
17 |
2N3924 |
NPN silicon RF power transistor |
Motorola |
18 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
19 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
20 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
21 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
22 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
23 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
24 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
25 |
2N4428 |
NPN silicon RF power transistor 0.75W - 500MHz |
Motorola |
26 |
2N4429 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
27 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
28 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
29 |
2N5160 |
PNP Silicon RF Power Transistor |
New Jersey Semiconductor |
30 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| | | |