No. |
Part Name |
Description |
Manufacturer |
1 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
2 |
1N6263 EQUIV |
Silicon Schottky Barrier Diode |
Honey Technology |
3 |
1S1820 |
Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer |
Hitachi Semiconductor |
4 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
5 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
6 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
7 |
3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
8 |
74HC7014 |
Hex non-inverting precision Schmitt-trigger |
Philips |
9 |
74HC7014D |
Hex non-inverting precision Schmitt-trigger |
Nexperia |
10 |
74HC7014D |
Hex non-inverting precision Schmitt-trigger |
NXP Semiconductors |
11 |
74HC7014D |
Hex non-inverting precision Schmitt-trigger |
Philips |
12 |
74HC7014D-Q100 |
Hex non-inverting precision Schmitt-trigger |
Nexperia |
13 |
74HC7014N |
Hex non-inverting precision Schmitt-trigger |
NXP Semiconductors |
14 |
74HC7014N |
Hex non-inverting precision Schmitt-trigger |
Philips |
15 |
AN1542 |
THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION |
SGS Thomson Microelectronics |
16 |
AN582 |
PROTECTION SCHEMATICS FOR TELEPHONE SET |
SGS Thomson Microelectronics |
17 |
AN584 |
PROTECTION SCHEMATICS FOR SWITCHING SYSTEM |
SGS Thomson Microelectronics |
18 |
ASIBAT38 |
SILICON SCHOTTKY BARRIER DIODE |
Advanced Semiconductor |
19 |
BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
20 |
BAS125-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
21 |
BAS125-04W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
22 |
BAS125-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
23 |
BAS125-05W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
24 |
BAS125-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
25 |
BAS125-06W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
26 |
BAS125-07 |
Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) |
Siemens |
27 |
BAS125-07W |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
28 |
BAS125W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
29 |
BAS140 |
Silicon Schottky Diode |
Infineon |
30 |
BAS140 |
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
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