| No. |
Part Name |
Description |
Manufacturer |
| 1 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 4 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 5 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 7 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 8 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 9 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 10 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 11 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 12 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 15 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 17 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 18 |
29EE010 |
1 Mbit (128K x8) Page-Mode EEPROM |
Silicon Storage Technology |
| 19 |
2N5641 |
Trans GP BJT NPN 35V 1A 4-Pin Style M135 |
New Jersey Semiconductor |
| 20 |
2N5642 |
Trans GP BJT NPN 35V 3A 4-Pin Style M135 |
New Jersey Semiconductor |
| 21 |
2N5643 |
Trans GP BJT NPN 35V 5A 4-Pin Style M135 |
New Jersey Semiconductor |
| 22 |
2N6081 |
Trans GP BJT NPN 18V 2.5A 4-Pin Style M135 |
New Jersey Semiconductor |
| 23 |
2N6084 |
Trans GP BJT NPN 18V 6A 4-Pin Style M135 |
New Jersey Semiconductor |
| 24 |
39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
Silicon Storage Technology |
| 25 |
39SF020 |
2 Megabit (256K x 8) Multi-Purpose Flash |
Silicon Storage Technology |
| 26 |
39VF040 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
Silicon Storage Technology |
| 27 |
49LF002 |
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub |
Silicon Storage Technology |
| 28 |
5082-0800 |
SILICON STEP RECOVERY DIODE |
Advanced Semiconductor |
| 29 |
5962-89641012A |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
| 30 |
5962-8964101CA |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
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