No. |
Part Name |
Description |
Manufacturer |
1 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
4 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
5 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
8 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
9 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
10 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
11 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
12 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
13 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
14 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
15 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
16 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
17 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
18 |
5962-89641012A |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
19 |
5962-8964101CA |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
20 |
6SI1P |
Silicon standard rectifier 6A |
IPRS Baneasa |
21 |
6SI2P |
Silicon standard rectifier 6A |
IPRS Baneasa |
22 |
6SI3P |
Silicon standard rectifier 6A |
IPRS Baneasa |
23 |
6SI4P |
Silicon standard rectifier 6A |
IPRS Baneasa |
24 |
6SI5P |
Silicon standard rectifier 6A |
IPRS Baneasa |
25 |
AB-107 |
GIVING CONVERTERS A LITTLE GAIN BOOST WITH A FRONT END ANALOG GAIN STAGE |
Burr Brown |
26 |
AD8036 |
Unity Gain Stable - Low Distortion, Wide Bandwidth Voltage Feedback Clamp Amps |
Analog Devices |
27 |
AD841 |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
28 |
AD841JCHIPS |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
29 |
AD841JH |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
30 |
AD841JN |
Wideband, Unity-Gain Stable, Fast Settling Op Amp |
Analog Devices |
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