No. |
Part Name |
Description |
Manufacturer |
1 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
2 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
3 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
4 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
5 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
6 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
7 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
8 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
9 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
10 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
11 |
2N2060 |
Silicon transistor differential amplifiers |
SGS-ATES |
12 |
2N2060A |
Silicon transistor differential amplifiers |
SGS-ATES |
13 |
2N2223 |
Silicon transistor differential amplifiers |
SGS-ATES |
14 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
15 |
2N2453 |
Silicon transistor differential amplifiers |
SGS-ATES |
16 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
17 |
2N2642 |
Silicon transistor differential amplifiers |
SGS-ATES |
18 |
2N2643 |
Silicon transistor differential amplifiers |
SGS-ATES |
19 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
20 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
21 |
2N2723 |
NPN silicon transistor darlington amplifiers |
Sprague |
22 |
2N2724 |
NPN silicon transistor darlington amplifiers |
Sprague |
23 |
2N2725 |
NPN silicon transistor darlington amplifiers |
Sprague |
24 |
2N2785 |
NPN silicon transistor darlington amplifiers |
Sprague |
25 |
2N2903 |
Silicon transistor differential amplifiers |
SGS-ATES |
26 |
2N2903A |
Silicon transistor differential amplifiers |
SGS-ATES |
27 |
2N2915 |
Silicon transistor differential amplifiers |
SGS-ATES |
28 |
2N2916 |
Silicon transistor differential amplifiers |
SGS-ATES |
29 |
2N2917 |
Silicon transistor differential amplifiers |
SGS-ATES |
30 |
2N2918 |
Silicon transistor differential amplifiers |
SGS-ATES |
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