No. |
Part Name |
Description |
Manufacturer |
1 |
1U1G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
2 |
1U2G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
3 |
1U3G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
4 |
1U4G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
5 |
1U5G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
6 |
1U6G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
7 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
8 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
9 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
10 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
11 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
12 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
13 |
AD797 |
Ultralow Distortion Ultralow Noise Op Amp |
Analog Devices |
14 |
ADA4960-1 |
Low Distortion Ultrahigh Speed Differential ADC Driver |
Analog Devices |
15 |
BAR63-02V |
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package |
Infineon |
16 |
BAR64-02V |
PIN Diodes - RF Switch (High isolation) in ultra-small SC79 Package |
Infineon |
17 |
BAR65-02V |
PIN Diodes - Low Loss, Low Capacitance Switch in ultra small SC79 package |
Infineon |
18 |
BAR67-02V |
PIN Diodes - Low Loss Switch in ultra_small SC79 Package |
Infineon |
19 |
BAT54CV |
Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
20 |
BAT54CV |
BAT54CV; Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
21 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Nexperia |
22 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
NXP Semiconductors |
23 |
BAT54VV |
BAT54VV; Schottky barrier triple diode in ultra small SOT666 package |
Philips |
24 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Philips |
25 |
BBY53-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
26 |
BBY55-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
27 |
BBY57-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
28 |
BBY58-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
29 |
BMTX121AN |
βMTX121AN Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
30 |
BMTX121N |
βMTX121N Ultralow offset voltage precision preamplifier |
IPRS Baneasa |
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