No. |
Part Name |
Description |
Manufacturer |
1 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
2 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
3 |
PEMI1QFN-CG |
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
4 |
PEMI2QFN-CG |
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
5 |
PEMI4QFN-CG |
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
6 |
PEMI6QFN-CG |
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
7 |
PEMI8QFN-CG |
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection |
NXP Semiconductors |
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