| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 2 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 3 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 4 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 5 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 6 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 7 |
7403PC |
Quad 2-Input NAN-GATE with open-collector output |
TUNGSRAM |
| 8 |
74HCT32 |
Quad 2-Input OR Gate(High-Performance Silicon-Gate CMOS) |
System Logic Semiconductor |
| 9 |
AN203 |
Silicon-Gate Switching Functions Optimize Data Acquisition Front End |
Vishay |
| 10 |
BC41B143A-ANN-E4 |
BlueCore 4-ROM Plug-n-Go Single Chip Bluetooth v2.0 + EDR System |
etc |
| 11 |
BC41B143A-DS-003PC |
BlueCore 4-ROM Plug-n-Go Single Chip Bluetooth v2.0 + EDR System |
etc |
| 12 |
BC41B143AES-ANN-E4 |
BlueCore 4-ROM Plug-n-Go Single Chip Bluetooth v2.0 + EDR System |
etc |
| 13 |
CDSH3-222N-G |
Switching Diodes Array, VRRM=80V, VR=80V, PD=150mW, IF=300mA |
Comchip Technology |
| 14 |
CDSV3-202N-G |
Switching Diodes Array, VRRM=80V, VR=80V, PD=200mW, IF=300mA |
Comchip Technology |
| 15 |
EFD027 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 16 |
EFD060 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 17 |
EFD104 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 18 |
EFD106 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 19 |
EFD107 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 20 |
EFD108 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 21 |
EFD110 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 22 |
EFD111 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 23 |
EFD112 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 24 |
EFD115 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 25 |
FMN-G12S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 26 |
FMN-G14S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 27 |
FMN-G16S |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
| 28 |
HC4052 |
Analog Multiplexer/Demultiplexer(High-Performance Silicon-Gate CMOS) |
System Logic Semiconductor |
| 29 |
HC4094 |
8-Bit Serial-Input Shift Register With Latched 3-State Outputs(High-Performance Silicon-Gate CMOS) |
System Logic Semiconductor |
| 30 |
HC573 |
Octal 3-State Noninverting Transparent Latch(High-Performance Silicon-Gate CMOS) |
System Logic Semiconductor |
| | | |
