| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EFD027 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 2 |
EFD060 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 3 |
EFD104 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 4 |
EFD106 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 5 |
EFD107 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 6 |
EFD108 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 7 |
EFD110 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 8 |
EFD111 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 9 |
EFD112 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 10 |
EFD115 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 11 |
MT4S100T |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 12 |
MT4S100U |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 13 |
MT4S101T |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 14 |
MT4S101U |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| | | |
