| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
| 2 |
INA2586 |
1024 x 8-bit n-MOS EEPROM with IIC-bus interface |
INTEGRAL |
| 3 |
LMN200B01 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR |
Diodes |
| 4 |
LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR |
Diodes |
| 5 |
LMN400B01 |
400mA LOAD SWITCH PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR |
Diodes |
| 6 |
LMN400E01 |
400mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET |
Diodes |
| | | |
