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Datasheets for N-S

Datasheets found :: 13600
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No. Part Name Description Manufacturer
1 1024 In-System Programmable High Density PLD Lattice Semiconductor
2 1024-60LH/883 In-System Programmable High Density PLD Lattice Semiconductor
3 1024EA In-System Programmable High Density PLD Lattice Semiconductor
4 1032 In-System Programmable High Density PLD Lattice Semiconductor
5 1032E In-System Programmable High Density PLD Lattice Semiconductor
6 1032EA In-System Programmable High Density PLD Lattice Semiconductor
7 1048C In-System Programmable High Density PLD Lattice Semiconductor
8 1048EA In-System Programmable High Density PLD Lattice Semiconductor
9 160V In-System Programmable 3.3V Generic Digital CrosspointTM Lattice Semiconductor
10 2032E In-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
11 2032VE 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD Lattice Semiconductor
12 2032VL 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
13 2064VE 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD Lattice Semiconductor
14 2064VL 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
15 2096E In-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
16 2096VE 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
17 2096VL 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
18 2128E In-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
19 2128VE 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
20 2128VL 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
21 2192VE 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD Lattice Semiconductor
22 240VA In-SystemProgrammable3.3VGenericDigitalCrosspointTM Lattice Semiconductor
23 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
24 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
25 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
26 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
27 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
28 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
29 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
30 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State


Datasheets found :: 13600
Page: | 1 | 2 | 3 | 4 | 5 |



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