No. |
Part Name |
Description |
Manufacturer |
1 |
1024 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
2 |
1024-60LH/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
3 |
1024EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
4 |
1032 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
5 |
1032E |
In-System Programmable High Density PLD |
Lattice Semiconductor |
6 |
1032EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
7 |
1048C |
In-System Programmable High Density PLD |
Lattice Semiconductor |
8 |
1048EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
9 |
160V |
In-System Programmable 3.3V Generic Digital CrosspointTM |
Lattice Semiconductor |
10 |
2032E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
11 |
2032VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
12 |
2032VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
13 |
2064VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
14 |
2064VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
15 |
2096E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
16 |
2096VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
17 |
2096VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
18 |
2128E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
19 |
2128VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
20 |
2128VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
21 |
2192VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
22 |
240VA |
In-SystemProgrammable3.3VGenericDigitalCrosspointTM |
Lattice Semiconductor |
23 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
24 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
25 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
26 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
27 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
28 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
29 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
30 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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