| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ECA1CEN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) GA-A (Bi-polar) |
Panasonic |
| 2 |
ECA1EEN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) GA-A (Bi-polar) |
Panasonic |
| 3 |
ECA1HEN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) GA-A (Bi-polar) |
Panasonic |
| 4 |
ECEA1AKN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KA-A (Bi-polar) |
Panasonic |
| 5 |
ECEA1ASN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KS-A (Bi-polar) |
Panasonic |
| 6 |
ECEA1CKN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KA-A (Bi-polar) |
Panasonic |
| 7 |
ECEA1CSN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KS-A (Bi-polar) |
Panasonic |
| 8 |
ECEA1EKN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KA-A (Bi-polar) |
Panasonic |
| 9 |
ECEA1ESN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KS-A (Bi-polar) |
Panasonic |
| 10 |
ECEA1VKN100E |
Aluminum Electrolytic Capacitors (Radial Lead Type) KA-A (Bi-polar) |
Panasonic |
| 11 |
HGTG34N100E2 |
34A/ 1000V N-Channel IGBT |
Intersil |
| 12 |
MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS |
Motorola |
| 13 |
MTB3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
Motorola |
| 14 |
MTB3N100E |
2 Amp D2PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
| 15 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 16 |
MTP1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM |
Motorola |
| 17 |
MTP1N100E |
1 Amp TO-220AB, N-Channel, VDSS 1000 |
ON Semiconductor |
| 18 |
MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 19 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 20 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 21 |
MTV10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 22 |
MTV10N100E |
10 Amp D3PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 23 |
MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 24 |
MTV6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 25 |
MTV6N100E |
6 Amp D3PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
| 26 |
MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 27 |
MTW10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 28 |
MTW10N100E |
OBSOLETE - Power MOSFET 10 Amps, 1000 Volts |
ON Semiconductor |
| 29 |
MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247 |
ON Semiconductor |
| 30 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
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