No. |
Part Name |
Description |
Manufacturer |
1 |
1N1100 |
Rectifier Diode, Replacement 1N4002 |
Motorola |
2 |
2N1100 |
Germanium power transistor, 15A |
COSEM |
3 |
2N1100 |
Germanium power transistor |
COSEM |
4 |
2N1100 |
PNP germanium power transistor |
Motorola |
5 |
2N1100 |
Germanium PNP Transistor |
Motorola |
6 |
2N1100 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
7 |
ACDBN1100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
8 |
AN1100 |
ST10X167/F168 REDUCING A TO D CONVERSION ERROR - 19/10/1998 (OBSOLETE, REPLACED BY AN1493) |
SGS Thomson Microelectronics |
9 |
CDBN1100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
10 |
T158N1100 |
160 AMPS 1100V THYRISTOR |
IPRS Baneasa |
11 |
T198N1100 |
200 AMPS 1100V THYRISTOR |
IPRS Baneasa |
12 |
T200N1100 |
200 AMPS 1100V THYRISTOR |
IPRS Baneasa |
13 |
T250N1100 |
250 AMPS 1100V THYRISTOR |
IPRS Baneasa |
14 |
T320N1100 |
320 AMPS 1100V THYRISTOR |
IPRS Baneasa |
15 |
T350N1100 |
350 AMPS 1100V THYRISTOR |
IPRS Baneasa |
16 |
T63N1100 |
63 AMPS 1100V THYRISTOR |
IPRS Baneasa |
17 |
T80N1100 |
80 AMPS 1100V THYRISTOR |
IPRS Baneasa |
18 |
TPN11003NL |
Power MOSFET (N-ch single VDSS≤30V) |
TOSHIBA |
19 |
TPN11006NL |
Power MOSFET (N-ch single 30V<VDSS≤60V) |
TOSHIBA |
20 |
TT50N1100 |
Compact module Thyristor-Thyristor 1100V 50A |
IPRS Baneasa |
21 |
TT63N1100 |
Compact module Thyristor-Thyristor 1100V |
IPRS Baneasa |
22 |
TT80N1100 |
Compact module Thyristor-Thyristor 1100V 80A |
IPRS Baneasa |
23 |
UN11004 |
Circuit Protector Devices - Circuit Protector Elements |
Panasonic |
24 |
UN11006 |
Circuit Protector Devices - Circuit Protector Elements |
Panasonic |
25 |
UN11008 |
Circuit Protector Devices - Circuit Protector Elements |
Panasonic |
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