| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1106 |
Silicon NPN Transistor |
Motorola |
| 2 |
AN1106 |
ST7 - TRANSLATING ASSEMBLY CODE FROM HC05 TO ST7 |
SGS Thomson Microelectronics |
| 3 |
RN1106 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 4 |
RN1106ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 5 |
RN1106CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 6 |
RN1106F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 7 |
RN1106FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 8 |
RN1106MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 9 |
VN1106N1 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 10 |
VN1106N2 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 11 |
VN1106N5 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 12 |
VN1106ND |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| | | |
