| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1110 |
Rectifier Diode |
Motorola |
| 2 |
2N1110 |
Germanium PNP Transistor |
Motorola |
| 3 |
ON1110 |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 4 |
RN1110 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 5 |
RN1110CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 6 |
RN1110F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 7 |
RN1110FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 8 |
RN1110MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 9 |
TPN1110ENH |
Power MOSFET (N-ch 150V<VDSS≤250V) |
TOSHIBA |
| 10 |
UN1110 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
| 11 |
VN1110N1 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 12 |
VN1110N2 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 13 |
VN1110N5 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 14 |
VN1110ND |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 15 |
XN1110 |
Composite Device - Composite Transistors |
Panasonic |
| | | |
