| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1119 |
Silicon Power Rectifier |
Microsemi |
| 2 |
1N1119 |
Rectifier Diode, Replacement MR1125 |
Motorola |
| 3 |
1N1119 |
Diffused Silicon Rectifier 2.5A 500V |
Texas Instruments |
| 4 |
1N1119A |
12A silicon power rectifier, 50V |
Microsemi |
| 5 |
1N1119AR |
12A silicon power rectifier, 50V |
Microsemi |
| 6 |
1N1119B |
12A silicon power rectifier, 50V |
Microsemi |
| 7 |
1N1119R |
12A silicon power rectifier, 50V |
Microsemi |
| 8 |
1N1119R |
Diffused Silicon Rectifier 2.5A 500V, reverse polarity |
Texas Instruments |
| 9 |
1N1119RB |
12A silicon power rectifier, 50V |
Microsemi |
| 10 |
2N1119 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11 |
2N1119 |
Silicon PNP Transistor |
Motorola |
| 12 |
2N1119A |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 13 |
AN1119 |
CORRECT POWER-ON AND POWER-OFF FOR THE M93CXX AND M93SXX |
SGS Thomson Microelectronics |
| 14 |
JAN-2N1119 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 15 |
RN1119MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 16 |
UN1119 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
| 17 |
USA-2N1119 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 18 |
XN1119 |
Composite Device - Composite Transistors |
Panasonic |
| | | |
