| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1306 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
1N1306 |
Silicon Rectifier Diode |
Motorola |
| 3 |
1N1306 |
Diode 300V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 4 |
2N1306 |
Germanium NPN fast switching Transistor |
COMPELEC |
| 5 |
2N1306 |
H.F. ALLOY NPN Transistor |
COSEM |
| 6 |
2N1306 |
Germanium High Frequency Transistor |
COSEM |
| 7 |
2N1306 |
Switching transistor |
mble |
| 8 |
2N1306 |
Switching transistor |
mble |
| 9 |
2N1306 |
Germanium NPN Transistor |
Motorola |
| 10 |
2N1306 |
Germanium N-P-N low power transistor |
Mullard |
| 11 |
2N1306 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
| 12 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 13 |
RN1306 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 14 |
VN1306 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 15 |
VN1306N2 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 16 |
VN1306N3 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| | | |
