No. |
Part Name |
Description |
Manufacturer |
1 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
2 |
1N1880 |
Zener Diode 22V 1W |
Motorola |
3 |
1N1881 |
Zener Diode 27V 1W |
Motorola |
4 |
1N1882 |
Zener Diode 33V 1W |
Motorola |
5 |
1N1883 |
Zener Diode 39V 1W |
Motorola |
6 |
1N1884 |
Zener Diode 47V 1W |
Motorola |
7 |
1N1885 |
Zener Diode 56V 1W |
Motorola |
8 |
1N1886 |
Zener Diode 68V 1W |
Motorola |
9 |
1N1887 |
Zener Diode 82V 1W |
Motorola |
10 |
1N1888 |
Zener Diode 100V 1W |
Motorola |
11 |
1N1889 |
Zener Diode 120V 1W |
Motorola |
12 |
1N188A |
Germanium Signal Diode |
Motorola |
13 |
2N188 |
Germanium PNP Transistor |
Motorola |
14 |
2N1880 |
THYRISTOR |
Motorola |
15 |
2N1880A |
THYRISTOR |
Motorola |
16 |
2N1881 |
THYRISTOR |
Motorola |
17 |
2N1882 |
THYRISTOR |
Motorola |
18 |
2N1883 |
THYRISTOR |
Motorola |
19 |
2N1884 |
THYRISTOR |
Motorola |
20 |
2N1885 |
THYRISTOR |
Motorola |
21 |
2N1886 |
Silicon NPN Transistor |
Motorola |
22 |
2N1886 |
Trans GP BJT NPN 60V 0.25A 3-Pin TO-39 |
New Jersey Semiconductor |
23 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
24 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
25 |
2N1889 |
Silicon NPN Transistor |
Motorola |
26 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
27 |
2N1889 |
Transistor |
SGS-ATES |
28 |
2N1889 |
NPN Silicon Transistor |
Texas Instruments |
29 |
2N188A |
Germanium PNP Transistor |
Motorola |
30 |
3N188 |
DUAL P CHANNEL ENHANCEMENT MODE MOSFET |
Intersil |
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