| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
| 2 |
1N1880 |
Zener Diode 22V 1W |
Motorola |
| 3 |
1N1881 |
Zener Diode 27V 1W |
Motorola |
| 4 |
1N1882 |
Zener Diode 33V 1W |
Motorola |
| 5 |
1N1883 |
Zener Diode 39V 1W |
Motorola |
| 6 |
1N1884 |
Zener Diode 47V 1W |
Motorola |
| 7 |
1N1885 |
Zener Diode 56V 1W |
Motorola |
| 8 |
1N1886 |
Zener Diode 68V 1W |
Motorola |
| 9 |
1N1887 |
Zener Diode 82V 1W |
Motorola |
| 10 |
1N1888 |
Zener Diode 100V 1W |
Motorola |
| 11 |
1N1889 |
Zener Diode 120V 1W |
Motorola |
| 12 |
1N188A |
Germanium Signal Diode |
Motorola |
| 13 |
2N188 |
Germanium PNP Transistor |
Motorola |
| 14 |
2N1880 |
THYRISTOR |
Motorola |
| 15 |
2N1880A |
THYRISTOR |
Motorola |
| 16 |
2N1881 |
THYRISTOR |
Motorola |
| 17 |
2N1882 |
THYRISTOR |
Motorola |
| 18 |
2N1883 |
THYRISTOR |
Motorola |
| 19 |
2N1884 |
THYRISTOR |
Motorola |
| 20 |
2N1885 |
THYRISTOR |
Motorola |
| 21 |
2N1886 |
Silicon NPN Transistor |
Motorola |
| 22 |
2N1886 |
Trans GP BJT NPN 60V 0.25A 3-Pin TO-39 |
New Jersey Semiconductor |
| 23 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 24 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 25 |
2N1889 |
Silicon NPN Transistor |
Motorola |
| 26 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 27 |
2N1889 |
Transistor |
SGS-ATES |
| 28 |
2N188A |
Germanium PNP Transistor |
Motorola |
| 29 |
3N188 |
DUAL P CHANNEL ENHANCEMENT MODE MOSFET |
Intersil |
| 30 |
3N188 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
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