| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
| 2 |
1N1890 |
Zener Diode 150V 1W |
Motorola |
| 3 |
1N1891 |
Zener Diode 8.2V 10W |
Motorola |
| 4 |
1N1892 |
Zener Diode 10V 10W |
Motorola |
| 5 |
1N1893 |
Zener Diode 10V 10W |
Motorola |
| 6 |
1N1894 |
Zener Diode 15V 10W |
Motorola |
| 7 |
1N1895 |
Zener Diode 18V 10W |
Motorola |
| 8 |
1N1896 |
Zener Diode 22V 10W |
Motorola |
| 9 |
1N1897 |
Zener Diode 27V 10W |
Motorola |
| 10 |
1N1898 |
Zener Diode 33V 10W |
Motorola |
| 11 |
1N1899 |
Zener Diode 39V 10W |
Motorola |
| 12 |
2N189 |
Germanium PNP Transistor |
Motorola |
| 13 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 15 |
2N1890 |
NPN Transistor |
Microsemi |
| 16 |
2N1890 |
Silicon NPN Transistor |
Motorola |
| 17 |
2N1890 |
Trans GP BJT NPN 60V 0.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 18 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 19 |
2N1890 |
Transistor |
SGS-ATES |
| 20 |
2N1890 |
NPN Silicon Transistor |
Texas Instruments |
| 21 |
2N1890S |
NPN Transistor |
Microsemi |
| 22 |
2N1891 |
Germanium NPN Transistor |
Motorola |
| 23 |
2N1892 |
Germanium PNP Transistor |
Motorola |
| 24 |
2N1893 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 25 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 26 |
2N1893 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 27 |
2N1893 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 28 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 29 |
2N1893 |
General purpose NPN transistor |
FERRANTI |
| 30 |
2N1893 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| | | |
