| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1906 |
Zener Diode 150V 10W |
Motorola |
| 2 |
2N1906 |
Germanium PNP Transistor |
Motorola |
| 3 |
2N1906 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 4 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 5 |
RN1906 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 6 |
RN1906AFS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 7 |
RN1906FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 8 |
RN1906FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 9 |
ZXTN19060CFF |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 10 |
ZXTN19060CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 11 |
ZXTN19060CG |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 12 |
ZXTN19060CGTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| | | |
