No. |
Part Name |
Description |
Manufacturer |
1 |
1N1910 |
Rectifier Diode |
Motorola |
2 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
3 |
2N1910 |
Silicon Controlled Rectifier |
Microsemi |
4 |
2N1910 |
THYRISTOR |
Motorola |
5 |
2N1910 |
Thyristor SCR 50V 1.6KA 3-Pin TO-209AA |
New Jersey Semiconductor |
6 |
2N1910 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
7 |
99003-2N1910 1 |
Silicon Controlled Rectifier |
Microsemi |
8 |
RN1910 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
9 |
RN1910AFS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
10 |
RN1910FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
11 |
RN1910FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
12 |
ZXTN19100CFF |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
13 |
ZXTN19100CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
14 |
ZXTN19100CG |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
15 |
ZXTN19100CGTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
16 |
ZXTN19100CZ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
17 |
ZXTN19100CZTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
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