| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N210 |
Silicon Zener Diode |
Motorola |
| 2 |
1N2102 |
Microwave L-S-band Detector |
Motorola |
| 3 |
1N2103 |
Rectifier Diode |
Motorola |
| 4 |
1N2104 |
Rectifier Diode |
Motorola |
| 5 |
1N2105 |
Rectifier Diode |
Motorola |
| 6 |
1N2106 |
Rectifier Diode |
Motorola |
| 7 |
1N2107 |
Rectifier Diode |
Motorola |
| 8 |
1N2108 |
Rectifier Diode |
Motorola |
| 9 |
1N2109 |
Rectifier Diode |
Motorola |
| 10 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 11 |
2N2100 |
Germanium PNP Transistor |
Motorola |
| 12 |
2N2100 |
ECDC® PNP transistor core drivers |
Sprague |
| 13 |
2N2100A |
Germanium PNP Transistor |
Motorola |
| 14 |
2N2101 |
Silicon NPN Transistor |
Motorola |
| 15 |
2N2101 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 16 |
2N2102 |
AMPLIFIER TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 17 |
2N2102 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 18 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 19 |
2N2102 |
General purpose NPN transistor |
FERRANTI |
| 20 |
2N2102 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 21 |
2N2102 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 22 |
2N2102 |
Silicon NPN Transistor |
Motorola |
| 23 |
2N2102 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 24 |
2N2102 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
| 25 |
2N2102 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 26 |
2N2102A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 27 |
2N2102A |
Silicon NPN Transistor |
Motorola |
| 28 |
2N2104 |
Silicon PNP Transistor |
Motorola |
| 29 |
2N2105 |
Silicon PNP Transistor |
Motorola |
| 30 |
2N2106 |
Silicon NPN Transistor |
Motorola |
| | | |
