No. |
Part Name |
Description |
Manufacturer |
1 |
1N210 |
Silicon Zener Diode |
Motorola |
2 |
1N2102 |
Microwave L-S-band Detector |
Motorola |
3 |
1N2103 |
Rectifier Diode |
Motorola |
4 |
1N2104 |
Rectifier Diode |
Motorola |
5 |
1N2105 |
Rectifier Diode |
Motorola |
6 |
1N2106 |
Rectifier Diode |
Motorola |
7 |
1N2107 |
Rectifier Diode |
Motorola |
8 |
1N2108 |
Rectifier Diode |
Motorola |
9 |
1N2109 |
Rectifier Diode |
Motorola |
10 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
11 |
2N2100 |
Germanium PNP Transistor |
Motorola |
12 |
2N2100 |
ECDC® PNP transistor core drivers |
Sprague |
13 |
2N2100A |
Germanium PNP Transistor |
Motorola |
14 |
2N2101 |
Silicon NPN Transistor |
Motorola |
15 |
2N2101 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
16 |
2N2102 |
AMPLIFIER TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
17 |
2N2102 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
18 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
19 |
2N2102 |
General purpose NPN transistor |
FERRANTI |
20 |
2N2102 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
21 |
2N2102 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
22 |
2N2102 |
Silicon NPN Transistor |
Motorola |
23 |
2N2102 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
24 |
2N2102 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
25 |
2N2102 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
26 |
2N2102A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
27 |
2N2102A |
Silicon NPN Transistor |
Motorola |
28 |
2N2104 |
Silicon PNP Transistor |
Motorola |
29 |
2N2105 |
Silicon PNP Transistor |
Motorola |
30 |
2N2106 |
Silicon NPN Transistor |
Motorola |
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