| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2102 |
Microwave L-S-band Detector |
Motorola |
| 2 |
2N2102 |
AMPLIFIER TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 3 |
2N2102 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 4 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 5 |
2N2102 |
General purpose NPN transistor |
FERRANTI |
| 6 |
2N2102 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 7 |
2N2102 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 8 |
2N2102 |
Silicon NPN Transistor |
Motorola |
| 9 |
2N2102 |
Silicon NPN Transistor |
Motorola |
| 10 |
2N2102 |
Medium Power NPN Transistor |
National Semiconductor |
| 11 |
2N2102 |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 12 |
2N2102 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
| 13 |
2N2102 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 14 |
2N2102 |
NPN Silicon Transistor |
Texas Instruments |
| 15 |
2N2102A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 16 |
2N2102A |
Silicon NPN Transistor |
Motorola |
| 17 |
2N2102A |
NPN Silicon Transistor |
Texas Instruments |
| 18 |
AGN21024 |
ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY |
Matsushita Electric Works(Nais) |
| 19 |
MMN2102 |
1024 bit static Random-Access Memory (RAM) |
Microelectronica |
| 20 |
MMN2102-2 |
1024 bit static Random-Access Memory (RAM) |
Microelectronica |
| 21 |
MMN2102-4 |
1024 bit static Random-Access Memory (RAM) |
Microelectronica |
| 22 |
MMN2102-6 |
1024 bit static Random-Access Memory (RAM) |
Microelectronica |
| 23 |
RN2102 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 24 |
RN2102ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 25 |
RN2102CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 26 |
RN2102F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 27 |
RN2102FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 28 |
RN2102MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 29 |
TC51-N2102ECBTR |
1uA voltage detector with output delay, 2.1V |
Microchip |
| 30 |
TC54VN2102ECB |
VOLTAGE DETECTOR |
TelCom Semiconductor |
| | | |
