| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2609 |
Rectifier Diode |
Motorola |
| 2 |
1N2609 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3 |
2N2609 |
P-CHANNEL FIELD EFFECT TRANSISTOR General Purpose |
Amelco Semiconductor |
| 4 |
2N2609 |
Leaded JFET General Purpose |
Central Semiconductor |
| 5 |
2N2609 |
P-Channel JFET General Purpose Amplifier |
Intersil |
| 6 |
2N2609 |
P Channel MOSFET |
Microsemi |
| 7 |
2N2609 |
JFET General Purpose P-Channel - Depletion Transistor |
Motorola |
| 8 |
2N2609 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 9 |
2N2609 |
P-Channel FET |
National Semiconductor |
| 10 |
2N2609 |
Trans JFET P-CH 3-Pin TO-18 |
New Jersey Semiconductor |
| 11 |
2N2609 |
P-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12 |
JAN2N2609 |
P Channel MOSFET |
Microsemi |
| 13 |
MQ2N2609 |
P-Channel JFET Transistor |
Microsemi |
| 14 |
RN2609 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| | | |
