| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N270 |
100 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 2 |
1N270 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 3 |
1N270 |
Germanium Diode |
Microsemi |
| 4 |
1N270 |
Germanium Signal Diode |
Motorola |
| 5 |
1N270 |
Diode 100V 0.04A 2-Pin DO-7 |
New Jersey Semiconductor |
| 6 |
1N270 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 7 |
1N2700 |
Rectifier Diode |
Motorola |
| 8 |
1N2701 |
Rectifier Diode |
Motorola |
| 9 |
1N2702 |
Rectifier Diode |
Motorola |
| 10 |
1N2705 |
Rectifier Diode |
Motorola |
| 11 |
1N2708 |
Rectifier Diode |
Motorola |
| 12 |
1N270JAN |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 13 |
1N270JTXV |
100 V, 60 mA, gold bonded germanium diode |
BKC International Electronics |
| 14 |
2N270 |
Germanium PNP Transistor |
Motorola |
| 15 |
2N2706 |
Germanium PNP Transistor |
Motorola |
| 16 |
2N2707 |
Germanium Transistor |
Motorola |
| 17 |
2N2708 |
Silicon NPN Transistor |
Motorola |
| 18 |
2N2709 |
Silicon PNP Transistor |
Motorola |
| 19 |
JAN1N270 |
Germanium Diode |
Microsemi |
| 20 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
| 21 |
JANTX1N270 |
Germanium Diode |
Microsemi |
| 22 |
JANTXV1N270 |
Germanium Diode |
Microsemi |
| 23 |
PRN10116N2701J |
Bussed Resistor Network |
California Micro Devices Corp |
| 24 |
PRN10116N2701JR |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 25 |
PRN10116N2701JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 26 |
RN270 |
Wireless Modules |
Microchip |
| 27 |
RN2701 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 28 |
RN2701JE |
Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 29 |
RN2702 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 30 |
RN2702JE |
Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| | | |
