| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3070 |
200 V, 250 mW general purpose diode |
BKC International Electronics |
| 2 |
1N3070 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 3 |
1N3070 |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 4 |
1N3070 |
Signal or Computer Diode |
Microsemi |
| 5 |
1N3070 |
Signal Diode |
Motorola |
| 6 |
1N3070 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 7 |
1N3070 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 8 |
1N3070 |
Silicon Switching Diode |
Texas Instruments |
| 9 |
1N3070 |
Glass passivated silicon diode |
Texas Instruments |
| 10 |
1N3070 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 11 |
1N3070TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 12 |
1N3070UR-1 |
Signal or Computer Diode |
Microsemi |
| 13 |
1N3070_T50R |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 14 |
2N3070 |
N-Channel Field Effect Transistor general purpose |
Amelco Semiconductor |
| 15 |
2N3070 |
N-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 16 |
2N3070 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
| 17 |
2N3070A |
N-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 18 |
DMN3070SSN |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 19 |
DMN3070SSN-7 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 20 |
JAN1N3070 |
Signal or Computer Diode |
Microsemi |
| 21 |
JAN1N3070UR-1 |
Signal or Computer Diode |
Microsemi |
| 22 |
JANTX1N3070 |
Signal or Computer Diode |
Microsemi |
| 23 |
JANTX1N3070UR-1 |
Signal or Computer Diode |
Microsemi |
| 24 |
JANTXV1N3070 |
Signal or Computer Diode |
Microsemi |
| 25 |
JANTXV1N3070UR-1 |
Signal or Computer Diode |
Microsemi |
| | | |
