| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N355 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2 |
1N355 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 3 |
1N355 |
Germanium Signal Diode |
Motorola |
| 4 |
1N3550 |
Signal Diode |
Motorola |
| 5 |
1N3551 |
Varactor Diode |
Motorola |
| 6 |
1N3552 |
Varactor Diode |
Motorola |
| 7 |
1N3553 |
Reference Diode |
Motorola |
| 8 |
1N3554 |
Varactor Diode |
Motorola |
| 9 |
1N3555 |
Varactor Diode |
Motorola |
| 10 |
1N3556 |
Varactor Diode |
Motorola |
| 11 |
1N3557 |
Varactor Diode |
Motorola |
| 12 |
1N3558 |
Matched Pair of 1N751A Zener Diode |
Motorola |
| 13 |
1N3559 |
Germanium Signal Diode |
Motorola |
| 14 |
2N355 |
Silicon PNP Transistor |
Motorola |
| 15 |
2N3550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 16 |
2N3550 |
Silicon PNP Transistor |
Motorola |
| 17 |
2N3550 |
PNP Transistor - low level AMPS |
National Semiconductor |
| 18 |
2N3551 |
Silicon NPN Transistor |
Motorola |
| 19 |
2N3552 |
Silicon NPN Transistor |
Motorola |
| 20 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 21 |
2N3553 |
High Frequency NPN transistor |
CCSIT-CE |
| 22 |
2N3553 |
High frequency NPN transistor |
FERRANTI |
| 23 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 24 |
2N3553 |
Transmitting transistor NPN |
mble |
| 25 |
2N3553 |
NPN silicon high frequency transistor 2.5W - 175MHz |
Motorola |
| 26 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 27 |
2N3553 |
Silicon NPN Transistor |
Motorola |
| 28 |
2N3553 |
R.F. power transistor |
Mullard |
| 29 |
2N3553 |
Silicon planar epitaxial overlay transistor |
New Jersey Semiconductor |
| 30 |
2N3553 |
Silicon planar epitaxial overlay transistor |
Philips |
| | | |
