| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3839 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
| 2 |
1N3839 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 3 |
1N3839 |
4-Layer Diode |
Motorola |
| 4 |
2N3839 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 5 |
2N3839 |
High Frequency Transistor NPN Silicon |
Motorola |
| 6 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 7 |
2N3839 |
Silicon NPN Transistor |
Motorola |
| 8 |
2N3839 |
TBD |
New Jersey Semiconductor |
| 9 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 10 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 11 |
2N3839 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| | | |
