| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3903 |
Fast Rectifier (100-500ns) |
Microsemi |
| 2 |
1N3903 |
Fast recovery silicon rectifier diode |
Motorola |
| 3 |
1N3903 |
Rectifier Diode 6A |
Motorola |
| 4 |
1N3903 |
20A Fast-Recovery Silicon Rectifier 400V |
RCA Solid State |
| 5 |
1N3903 |
Silicon rectifier diode - fast recovery series |
SESCOSEM |
| 6 |
1N3903 |
400 V, 20 A fast recovery rectifier |
Solid State Devices Inc |
| 7 |
1N3903 |
Fast Recovery Rectifier |
Transitron Electronic |
| 8 |
1N3903R |
Fast Rectifier (100-500ns) |
Microsemi |
| 9 |
1N3903R |
20A Fast-Recovery Silicon Rectifier 400V, reverse polarity |
RCA Solid State |
| 10 |
2N3903 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 11 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
| 12 |
2N3903 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 13 |
2N3903 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 14 |
2N3903 |
General purpose NPN transistor |
FERRANTI |
| 15 |
2N3903 |
Low Noise NPN Transistor |
FERRANTI |
| 16 |
2N3903 |
Switching NPN transistor |
FERRANTI |
| 17 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 18 |
2N3903 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 19 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 20 |
2N3903 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 21 |
2N3903 |
NPN silicon transistor |
Motorola |
| 22 |
2N3903 |
Silicon NPN Transistor |
Motorola |
| 23 |
2N3903 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 24 |
2N3903 |
NPN Silicon Transistor |
NEC |
| 25 |
2N3903 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 26 |
2N3903 |
npn epitaxial silicon transistor |
Samsung Electronic |
| 27 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 28 |
2N3903 |
Silicon NPN Epitaxial transistor (PCT Process) |
TOSHIBA |
| 29 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 30 |
2N3903-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| | | |
