| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4047 |
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 2 |
1N4047 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3 |
1N4047 |
Rectifier Diode 200V |
Motorola |
| 4 |
1N4047 |
Diode 200V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 5 |
1N4047 |
200V, 275A general purpose single diode |
Powerex Power Semiconductors |
| 6 |
1N4047R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 7 |
1N4047R |
200V, 275A general purpose single diode |
Powerex Power Semiconductors |
| 8 |
2N4047 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 9 |
2N4047 |
Silicon NPN Transistor |
Motorola |
| 10 |
2N4047 |
NPN Transistor - saturated switches |
National Semiconductor |
| 11 |
2N4047 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 12 |
IN4047R |
General Purpose Rectifier |
Powerex Power Semiconductors |
| 13 |
MN4047B |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
| 14 |
MN4047BS |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
| 15 |
R-IN4047 |
General Purpose Rectifier |
Powerex Power Semiconductors |
| 16 |
RA07N4047M |
MITSUBISHI RF MOSFET MODULE |
Mitsubishi Electric Corporation |
| 17 |
RA07N4047M-01 |
MITSUBISHI RF MOSFET MODULE |
Mitsubishi Electric Corporation |
| 18 |
RA07N4047M-E01 |
MITSUBISHI RF MOSFET MODULE |
Mitsubishi Electric Corporation |
| | | |
