| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N516 |
Rectifier Diode 600V 1A |
Motorola |
| 2 |
1N5160 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 3 |
1N5160 |
4-Layer Diode |
Motorola |
| 4 |
1N5162 |
150AMP AVG SILICON RECTIFIER DIODES |
International Rectifier |
| 5 |
1N5163 |
Harmonic Generator |
Motorola |
| 6 |
1N5164 |
Harmonic Generator |
Motorola |
| 7 |
1N5165 |
Hot Carrier Diode |
Motorola |
| 8 |
1N5165A |
Hot Carrier Diode |
Motorola |
| 9 |
1N5166 |
Hot Carrier Diode |
Motorola |
| 10 |
1N5166A |
Hot Carrier Diode |
Motorola |
| 11 |
1N5167 |
Hot Carrier Diode |
Motorola |
| 12 |
1N5167A |
Hot Carrier Diode |
Motorola |
| 13 |
1N5168 |
Hot Carrier Diode |
Motorola |
| 14 |
1N5169 |
Hot Carrier Diode |
Motorola |
| 15 |
2N516 |
Germanium NPN Transistor |
Motorola |
| 16 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
| 17 |
2N5160 |
Silicon PNP Transistor |
Motorola |
| 18 |
2N5160 |
PNP Silicon RF Power Transistor |
New Jersey Semiconductor |
| 19 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 20 |
2N5161 |
Silicon PNP Transistor |
Motorola |
| 21 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 22 |
2N5162 |
Silicon PNP Transistor |
Motorola |
| 23 |
2N5163 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 24 |
2N5163 |
PNP Silicon RF Power Transistor |
New Jersey Semiconductor |
| 25 |
2N5164 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 26 |
2N5164 |
THYRISTOR |
Motorola |
| 27 |
2N5164 |
SILICON CONTROLLED RECTIFIERS |
Motorola |
| 28 |
2N5164R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 29 |
2N5165 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 30 |
2N5165 |
THYRISTOR |
Motorola |
| | | |
