| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N521 |
Rectifier Diode 200V 1.25A |
Motorola |
| 2 |
1N5211 |
Rectifier Diode 200V 1A |
Motorola |
| 3 |
1N5211 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 4 |
1N5212 |
Rectifier Diode 400V 1A |
Motorola |
| 5 |
1N5212 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 6 |
1N5213 |
Rectifier Diode 600V 1A |
Motorola |
| 7 |
1N5213 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 8 |
1N5214 |
Rectifier Diode 800V 0.75A |
Motorola |
| 9 |
1N5214 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 10 |
1N5215 |
Rectifier Diode 200V 1A |
Motorola |
| 11 |
1N5215 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 12 |
1N5216 |
Rectifier Diode 400V 1A |
Motorola |
| 13 |
1N5216 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 14 |
1N5217 |
Rectifier Diode 600V 1A |
Motorola |
| 15 |
1N5217 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 16 |
1N5218 |
Rectifier Diode 800V 0.75A |
Motorola |
| 17 |
1N5218 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 18 |
1N5219 |
Signal Diode |
Motorola |
| 19 |
2N521 |
Germanium PNP Transistor |
Motorola |
| 20 |
2N5210 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 21 |
2N5210 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 22 |
2N5210 |
Low Noise NPN Transistor |
FERRANTI |
| 23 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 24 |
2N5210 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 25 |
2N5210 |
NPN silicon annular transistor |
Motorola |
| 26 |
2N5210 |
Silicon NPN Transistor |
Motorola |
| 27 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 28 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 29 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 30 |
2N5210BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| | | |
