| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N541 |
45 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2 |
1N541 |
Germanium Diode |
COSEM |
| 3 |
1N541 |
Germanium diode |
IPRS Baneasa |
| 4 |
1N541 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 5 |
1N541 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 6 |
1N541 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 7 |
1N541 |
Germanim Signal Diode |
Motorola |
| 8 |
1N541 |
Germanium diode, detection |
SESCOSEM |
| 9 |
1N541 |
Tungsten point contact germanium diode - detection |
SESCOSEM |
| 10 |
1N5410 |
Rectifier Diode 175V 12A |
Motorola |
| 11 |
1N5411 |
Diac (Trigger Diode) |
Motorola |
| 12 |
1N5412 |
Signal Diode |
Motorola |
| 13 |
1N5413 |
Signal Diode |
Motorola |
| 14 |
1N5414 |
Signal Diode |
Motorola |
| 15 |
1N5415 |
GLASS PASSIVATED FAST SWITCHING RECTIFIER |
General Semiconductor |
| 16 |
1N5415 |
Fast Rectifier (100-500ns) |
Microsemi |
| 17 |
1N5415 |
Rectifier Diode 50V |
Motorola |
| 18 |
1N5415 |
Diode Switching 50V 3A 2-Pin GPR-3A |
New Jersey Semiconductor |
| 19 |
1N5415 |
50 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 20 |
1N5415-1 |
FAST RECTIFIERS |
Microsemi |
| 21 |
1N5415E3 |
Fast Rectifier (100-500ns) |
Microsemi |
| 22 |
1N5415US |
Fast Rectifier (100-500ns) |
Microsemi |
| 23 |
1N5415USE3 |
Fast Rectifier (100-500ns) |
Microsemi |
| 24 |
1N5416 |
Leaded Rectifier General Purpose |
Central Semiconductor |
| 25 |
1N5416 |
GLASS PASSIVATED FAST SWITCHING RECTIFIER |
General Semiconductor |
| 26 |
1N5416 |
Fast Rectifier (100-500ns) |
Microsemi |
| 27 |
1N5416 |
Rectifier Diode 100V |
Motorola |
| 28 |
1N5416 |
Diode Switching 100V 3A 2-Pin GPR-3A |
New Jersey Semiconductor |
| 29 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 30 |
1N5416E3 |
Fast Rectifier (100-500ns) |
Microsemi |
| | | |
