| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5551 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 2 |
1N5551 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 3 |
1N5551 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 4 |
1N5551 |
Diode Switching 400V 3A 2-Pin GPR-3A |
New Jersey Semiconductor |
| 5 |
1N5551 |
5A standard recovery rectifier diode, 400V |
Semtech |
| 6 |
1N5551 |
Standard Sinterglass Diode |
Vishay |
| 7 |
1N5551 |
400 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 8 |
1N5551E3 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 9 |
1N5551US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 10 |
1N5551USE3 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 11 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 12 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 13 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 15 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 16 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 17 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 18 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 19 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 20 |
2N5551 |
Amplifier Transistors |
Motorola |
| 21 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 22 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
| 23 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 24 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 25 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 26 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 27 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 28 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 29 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 30 |
2N5551-T |
Transistor |
Rectron Semiconductor |
| | | |
