| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5556 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1N5556 |
Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 3 |
1N5556B |
Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 4 |
2N5556 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
| 5 |
2N5556 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 6 |
2N5556 |
N-Channel JFET - low frequency, low noise |
National Semiconductor |
| 7 |
2N5556 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
| 8 |
2N5556 |
FET |
New Jersey Semiconductor |
| 9 |
JAN1N5556 |
Transient Voltage Suppressor |
Microsemi |
| 10 |
JANTX1N5556 |
Transient Voltage Suppressor |
Microsemi |
| 11 |
JANTXV1N5556 |
Transient Voltage Suppressor |
Microsemi |
| 12 |
N5556T |
High performance operational amplifier |
Signetics |
| 13 |
N5556V |
High performance operational amplifier |
Signetics |
| | | |
