No. |
Part Name |
Description |
Manufacturer |
1 |
1N5590 |
ZENER DIODE |
New Jersey Semiconductor |
2 |
1N5590A |
ZENER DIODE |
New Jersey Semiconductor |
3 |
1N5590B |
ZENER DIODE |
New Jersey Semiconductor |
4 |
1N5591 |
ZENER DIODE |
New Jersey Semiconductor |
5 |
1N5591A |
ZENER DIODE |
New Jersey Semiconductor |
6 |
1N5591B |
ZENER DIODE |
New Jersey Semiconductor |
7 |
1N5592 |
ZENER DIODE |
New Jersey Semiconductor |
8 |
1N5592A |
ZENER DIODE |
New Jersey Semiconductor |
9 |
1N5592B |
ZENER DIODE |
New Jersey Semiconductor |
10 |
1N5593 |
ZENER DIODE |
New Jersey Semiconductor |
11 |
1N5593A |
ZENER DIODE |
New Jersey Semiconductor |
12 |
1N5593B |
ZENER DIODE |
New Jersey Semiconductor |
13 |
1N5594 |
ZENER DIODE |
New Jersey Semiconductor |
14 |
1N5594A |
ZENER DIODE |
New Jersey Semiconductor |
15 |
1N5594B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
16 |
1N5594B |
Diode Zener Single 200V 5% 1W 2-Pin DO-41 Box |
New Jersey Semiconductor |
17 |
1N5597 |
High Voltage Rectifier |
Microsemi |
18 |
1N5597TX |
High Voltage Rectifier |
Microsemi |
19 |
1N5597TXV |
High Voltage Rectifier |
Microsemi |
20 |
2N559 |
Germanium PNP Transistor |
Motorola |
21 |
2N5590 |
NPN silicon RF power transistor |
Motorola |
22 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
23 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
24 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
25 |
2N5596 |
Application Note - Match impedances in microwave amplifiers |
Motorola |
26 |
2N5597 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
27 |
2N5597 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
28 |
2N5598 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
29 |
2N5599 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
30 |
2N5599 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
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