Datasheets for N5616

Datasheets found :: 25 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	1N5616	400 V, 1 A, miniature glass passivated junction medium-switching rectifier	General Instruments
2	1N5616	GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER	General Semiconductor
3	1N5616	Standard Rectifier (trr more than 500ns)	Microsemi
4	1N5616	Diode Switching 400V 1A 2-Pin GPR-1A	New Jersey Semiconductor
5	1N5616	400 V, 1 A standard recovery rectifier	Solid State Devices Inc
6	1N5616	400 V rectifier 1.5 A forward current, 2000 ns recovery time	Voltage Multipliers
7	1N5616GP	Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V	Vishay
8	1N5616GP79DC	Diode Switching 400V 1A 2-Pin DO-204AC	New Jersey Semiconductor
9	1N5616U	400 V rectifier 1.5 A forward current, 2000 ns recovery time	Voltage Multipliers
10	1N5616US	Standard Rectifier (trr more than 500ns)	Microsemi
11	2N5616	Silicon NPN Power Transistors TO-3 package	Savantic
12	FAN5616	High-Efficiency, Constant-Current LED Driver with Adaptive Change Pump	Fairchild Semiconductor
13	JAN1N5616	Standard Rectifier (trr more than 500ns)	Microsemi
14	JAN1N5616US	Standard Rectifier (trr more than 500ns)	Microsemi
15	JANS1N5616	Standard Rectifier (trr more than 500ns)	Microsemi
16	JANS1N5616US	Standard Rectifier (trr more than 500ns)	Microsemi
17	JANTX1N5616	Standard Rectifier (trr more than 500ns)	Microsemi
18	JANTX1N5616US	Standard Rectifier (trr more than 500ns)	Microsemi
19	JANTXV1N5616	Standard Rectifier (trr more than 500ns)	Microsemi
20	JANTXV1N5616US	Standard Rectifier (trr more than 500ns)	Microsemi
21	K4N56163QF	256Mbit gDDR2 SDRAM	Samsung Electronic
22	K4N56163QF-GC	256Mbit gDDR2 SDRAM	Samsung Electronic
23	K4N56163QF-GC25	256Mbit gDDR2 SDRAM	Samsung Electronic
24	K4N56163QF-GC30	256Mbit gDDR2 SDRAM	Samsung Electronic
25	K4N56163QF-GC37	256Mbit gDDR2 SDRAM	Samsung Electronic

Datasheets found :: 25 Page: | 1 |