No. |
Part Name |
Description |
Manufacturer |
1 |
1N5629 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N5629 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
3 |
1N5629A |
Transient Voltage Suppressor |
Microsemi |
4 |
1N5629A |
Diode TVS Single Uni-Dir 5.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
5 |
1N5629E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
2N5629 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
7 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
8 |
2N5629 |
Trans GP BJT NPN 100V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
9 |
2N5629 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
10 |
JAN1N5629 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
11 |
JAN1N5629A |
Transient Voltage Suppressor |
Microsemi |
12 |
JANTX1N5629 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
13 |
JANTX1N5629A |
Transient Voltage Suppressor |
Microsemi |
14 |
JANTXV1N5629 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
15 |
JANTXV1N5629A |
Transient Voltage Suppressor |
Microsemi |
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