No. |
Part Name |
Description |
Manufacturer |
1 |
1N6036 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6036 |
Diode TVS Single Bi-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
3 |
1N6036A |
Transient Voltage Suppressor |
Microsemi |
4 |
1N6036A |
Diode TVS Single Bi-Dir 6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
5 |
1N6036AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
1N6036B |
Diode TVS Single Bi-Dir 5.5V 15KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
7 |
1N6036E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
8 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
9 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
10 |
2N6036 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
11 |
2N6036 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
12 |
2N6036 |
Power 4A 80V PNPD |
ON Semiconductor |
13 |
2N6036 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
14 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
15 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
16 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
17 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
18 |
JAN1N6036 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
Microsemi |
19 |
JAN1N6036A |
Transient Voltage Suppressor |
Microsemi |
20 |
JANTX1N6036A |
Transient Voltage Suppressor |
Microsemi |
21 |
JANTXV1N6036A |
Transient Voltage Suppressor |
Microsemi |
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