| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6038 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1N6038 |
Diode TVS Single Bi-Dir 7V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 3 |
1N6038A |
Transient Voltage Suppressor |
Microsemi |
| 4 |
1N6038A |
Diode TVS Single Bi-Dir 7.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 5 |
1N6038AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 6 |
1N6038E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 7 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 8 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 9 |
2N6038 |
NPN Power Transistor TO-126 |
National Semiconductor |
| 10 |
2N6038 |
NPN Power Transistor |
National Semiconductor |
| 11 |
2N6038 |
NPN silicon power transistor 40W/4A |
National Semiconductor |
| 12 |
2N6038 |
Trans Darlington NPN 60V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 13 |
2N6038 |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
| 14 |
2N6038 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 15 |
2N6038 |
NPN medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
| 16 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 17 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 18 |
2N6038 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
| 19 |
JAN1N6038 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
Microsemi |
| 20 |
JAN1N6038A |
Transient Voltage Suppressor |
Microsemi |
| 21 |
JANTX1N6038A |
Transient Voltage Suppressor |
Microsemi |
| 22 |
JANTXV1N6038A |
Transient Voltage Suppressor |
Microsemi |
| | | |
