No. |
Part Name |
Description |
Manufacturer |
1 |
1N6039 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6039 |
Diode TVS Single Bi-Dir 8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
3 |
1N6039A |
Transient Voltage Suppressor |
Microsemi |
4 |
1N6039A |
Diode TVS Single Bi-Dir 8.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
5 |
1N6039AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
1N6039E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
7 |
2N6039 |
Leaded Power Transistor Darlington |
Central Semiconductor |
8 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
9 |
2N6039 |
NPN Power Transistor TO-126 |
National Semiconductor |
10 |
2N6039 |
NPN Power Transistor |
National Semiconductor |
11 |
2N6039 |
NPN silicon power transistor 40W/4A |
National Semiconductor |
12 |
2N6039 |
Trans Darlington NPN 80V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
13 |
2N6039 |
Power 4A 80V NPND |
ON Semiconductor |
14 |
2N6039 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
15 |
2N6039 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
16 |
2N6039 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
17 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
18 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
19 |
2N6039 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
20 |
JAN1N6039 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
Microsemi |
21 |
JAN1N6039A |
Transient Voltage Suppressor |
Microsemi |
22 |
JANTX1N6039A |
Transient Voltage Suppressor |
Microsemi |
23 |
JANTXV1N6039A |
Transient Voltage Suppressor |
Microsemi |
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