No. |
Part Name |
Description |
Manufacturer |
1 |
1N6050 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6050 |
Diode TVS Single Bi-Dir 24V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
3 |
1N6050A |
Transient Voltage Suppressor |
Microsemi |
4 |
1N6050A |
Diode TVS Single Bi-Dir 25V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
5 |
1N6050AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
1N6050E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
7 |
2N6050 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
8 |
2N6050 |
Leaded Power Transistor Darlington |
Central Semiconductor |
9 |
2N6050 |
60V power complementary silicon transistor |
Comset Semiconductors |
10 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
11 |
2N6050 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
12 |
2N6050 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
13 |
2N6050 |
Trans Darlington PNP 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
14 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
15 |
2N6050 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6057 |
Silicon Transistor Corporation |
16 |
2N6057 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6050 |
Silicon Transistor Corporation |
17 |
JAN1N6050 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
Microsemi |
18 |
JAN1N6050A |
Transient Voltage Suppressor |
Microsemi |
19 |
JANTX1N6050A |
Transient Voltage Suppressor |
Microsemi |
20 |
JANTXV1N6050A |
Transient Voltage Suppressor |
Microsemi |
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