No. |
Part Name |
Description |
Manufacturer |
1 |
1N6055 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6055A |
Transient Voltage Suppressor |
Microsemi |
3 |
1N6055A |
Diode TVS Single Bi-Dir 40V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
4 |
1N6055AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
5 |
1N6055E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
2N6053 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6055 |
Silicon Transistor Corporation |
7 |
2N6055 |
Leaded Power Transistor Darlington |
Central Semiconductor |
8 |
2N6055 |
60V complementary power darlington |
Comset Semiconductors |
9 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
10 |
2N6055 |
POWER TRANSISTORS(8A,100W) |
MOSPEC Semiconductor |
11 |
2N6055 |
Darlington 8A complementary silicon power NPN transistor |
Motorola |
12 |
2N6055 |
NPN Power Transistor TO-3 |
National Semiconductor |
13 |
2N6055 |
NPN silicon power transistor 100W |
National Semiconductor |
14 |
2N6055 |
Trans Darlington NPN/PNP 60V 8A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
15 |
2N6055 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
16 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
17 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
18 |
2N6055 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6053 |
Silicon Transistor Corporation |
19 |
2N6055A |
Trans Darlington NPN/PNP 60V 8A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
20 |
JAN1N6055 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
Microsemi |
21 |
JAN1N6055A |
Transient Voltage Suppressor |
Microsemi |
22 |
JANTX1N6055A |
Transient Voltage Suppressor |
Microsemi |
23 |
JANTXV1N6055A |
Transient Voltage Suppressor |
Microsemi |
| | | |