No. |
Part Name |
Description |
Manufacturer |
1 |
1N6083 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
2 |
1N6083 |
Diode Zener Single 4.7V 20% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
3 |
1N6083A |
Diode Zener Single 4.7V 10% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
4 |
1N6083B |
Diode Zener Single 4.7V 5% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
5 |
1N6083C |
Diode Zener Single 4.7V 2% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
6 |
1N6083D |
Diode Zener Single 4.7V 1% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
7 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
8 |
2N6083 |
NPN silicon RF power transistor 30W - 175MHz |
Motorola |
9 |
2N6083 |
Trans GP BJT NPN 18V 4A |
New Jersey Semiconductor |
10 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
11 |
2N6083 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
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