No. |
Part Name |
Description |
Manufacturer |
1 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
2 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
3 |
2N6099 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4 |
2N6099 |
PNP power transistor |
FERRANTI |
5 |
2N6099 |
NPN Power Transistor TO-220 |
National Semiconductor |
6 |
2N6099 |
NPN Power Transistor |
National Semiconductor |
7 |
2N6099 |
Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
8 |
2N6099 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
9 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
10 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
11 |
2N6099 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
12 |
2N6099 |
Silicon power transistor |
SGS-ATES |
13 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
14 |
2N6099A |
Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
15 |
ESM141 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N6099 |
SESCOSEM |
| | | |