No. |
Part Name |
Description |
Manufacturer |
1 |
1N60D |
Diode Switching 50V 3A 2-Pin Case A |
New Jersey Semiconductor |
2 |
HGTG12N60D1 |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
3 |
HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
4 |
HGTG24N60D1 |
24A/ 600V N-Channel IGBT |
Intersil |
5 |
HGTG24N60D1D |
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
6 |
HGTP12N60D1 |
12A/ 600V N-Channel IGBT |
Intersil |
7 |
KF1N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
8 |
KF2N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
9 |
KF3N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
10 |
KF4N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
11 |
KF5N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
12 |
KF6N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
13 |
KP11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
14 |
KP8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
15 |
KPS11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
16 |
KPS8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
17 |
MGS05N60D |
Insulated Gate Bipolar Transistor |
Motorola |
18 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
19 |
MGW20N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
20 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
21 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
22 |
MMG05N60D |
POWERLUX IGBT |
Motorola |
23 |
MMG05N60D |
OBSOLETE - IGBT N-Channel (0.5A, 600V) |
ON Semiconductor |
24 |
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
25 |
STB24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
26 |
STF24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
27 |
STP24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
28 |
STW24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
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