| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6111 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1N6111 |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 3 |
1N6111 |
500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
| 4 |
1N6111A |
Transient Voltage Suppressor |
Microsemi |
| 5 |
1N6111A |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin |
New Jersey Semiconductor |
| 6 |
1N6111A |
QPL 500 Watt Axial Leaded TVS |
Semtech |
| 7 |
1N6111Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 8 |
1N6111AUS |
Transient Voltage Suppressor |
Microsemi |
| 9 |
1N6111AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 10 |
1N6111e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 11 |
1N6111US |
Transient Voltage Suppressor |
Microsemi |
| 12 |
1N6111USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 13 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 14 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 15 |
2N6111 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 16 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 17 |
2N6111 |
PNP power transistor |
FERRANTI |
| 18 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
| 19 |
2N6111 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
| 20 |
2N6111 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
| 21 |
2N6111 |
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 22 |
2N6111 |
Power 7A 30V Discrete PNP |
ON Semiconductor |
| 23 |
2N6111 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 24 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 25 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
| 26 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
| 27 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
ST Microelectronics |
| 28 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 29 |
JAN1N6111 |
Transient Voltage Suppressor |
Microsemi |
| 30 |
JAN1N6111A |
Transient Voltage Suppressor |
Microsemi |
| | | |
